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Lanthanum Aluminate Single Crystal
LaAlO3
LaAlO3 single crystal provides a good lattice match for many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
LaAlO3 single crystal has also been used widely for special optical windows and as high quality sputtering targets.
Physical Properties:
Crystal Structure Rhombohedral: a=3.79 Å c= 13.11 Å at 25oC
Cubic: a=3.821 Å at > 435oC
Growth Method: Czochralski
Density: 6.52 g/cm3
Melt Point: 2080oC
Thermal expansion: 10 x10-6/oC
Dielectric Constant: ~ 25
Loss Tangent (at 10 GHz): ~3x10-4 @ 300K ,
~0.6 x10-4 @ 77K
Color and Appearance: Tan to Brown (annealed condition)
Visible twins on polished substrate
Chemical Stability: Insoluble in mineral acids at 25oC
and soluble in H3PO3 at > 150oC
Standard Products:
As - grown boule <100>: 2" dia x 50 ~ 70 mm length, 3" dia x 50 ~ 70 mm length
As cut blank <100>: 1" dia x 700 microns,
2" dia x 700 microns,
3” dia x 700 microns
Epi -polished substrates <100>, 1 or 2 sides polished, Ra< 8 Å by AFM certified:
1" dia x 500 microns,
2" dia x 500 microns,
3”dia x 500 microns,
0.5" x 0.5" x 500 microns,
1”x1”x 500 microns,
10x10x 500 microns
