Gallium Arsenide Wafers

LEC

2 inch (50.8 mm), 3 inch (76.2 mm), and 4 inch (100.6 mm) diameters

Available Orientations:

(100), (111) and (110) +/- 0.1 - 0.5^o

(211), (311) and others upon special request

Off Orientations available upon request

Semi Insulating:

N-Type, Undoped

Resistivity > 1 x 10⁷ Ohm cm

Etch Pit Density (EPD) < 8 x 10⁴ cm^-2

Mobility > 5000 cm²/V.sec 

Semi conducting:

N-Type, Silicon or Tellurium doped

P-Type, Zinc doped

Carrier Concentration > 1 x 10^17-18 cm^-3

Etch Pit Density (EPD) < 8 x 10⁴ cm^-2

Mobility: N-Type > 4200 cm²/V.sec, P-Type > 170 cm²/V.sec

Surface Finish:

        1 Face Polished, Epi Ready, Back Face Lapped and Etched

        2 Faces Polished, Epi Ready

        2 Faces Lapped or As Sawn Finish

Wafer Thickness:

         2 inch diameter x 375 - 450 microns

         3 inch diameter x 450 - 650 microns

         4 inch diameter x 500 - 750 microns

(other thicknesses upon request)